elektronische bauelemente 2SC6517 0.5a , 350v npn plastic encapsulated transistor 30-oct-2015 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features high voltage application telephone application marking 1z package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit collector-base voltage v cbo 350 v collector-emitter voltage v ceo 350 v emitter-base voltage v ebo 5 v collector current-continuous i c 500 ma base current i b 250 ma t a =25c 225 mw total device dissipation 1 derate above 25c p d 1.8 mw /c thermal resistance from junction to ambient 1 r ja 556 c/ w t a =25c 300 mw total device dissipation 2 derate above 25c p d 2.4 mw /c thermal resistance from junction to ambient 2 r ja 417 c/ w junction and storage temperature t j , t stg -55~150 c notes: 1. fr-5 board : 1 0.75 0.062 inch. 2. alumina substrate : 0.4 0.3 0.024 inch, 99.5 % alumina. package mpq leader size sot-23 3k 7 inch sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.09 0.18 b 2.10 2.65 h 0.35 0.65 c 1.20 1.40 j 0.08 0.20 d 0.89 1.17 k 0.6 ref. e 1.78 2.04 l 0.95 bsc. f 0.30 0.50
elektronische bauelemente 2SC6517 0.5a , 350v npn plastic encapsulated transistor 30-oct-2015 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics collector-base breakdown voltage v (br)cbo 350 - - v i c =100 a collector-emitter breakdown voltage v (br)ceo 350 - - v i c =1ma emitter-base breakdown voltage v (br)ebo 6 - - v i e =10 a collector cutoff current i cbo - - 50 na v cb =250v emitter cutoff current i ebo - - 50 na v eb =5v on characteristics 20 - - v ce =10v, i c =1ma 30 - - v ce =10v, i c =10ma 30 - 200 v ce =10v, i c =30ma 20 - 200 v ce =10v, i c =50ma dc current gain h fe 15 - - v ce =10v, i c =100ma - - 0.3 i c =10ma, i b =1ma - - 0.35 i c =20ma, i b =2ma - - 0.5 i c =30ma, i b =3ma collector-emitter saturation voltage 1 v ce(sat) - - 1 v i c =50ma, i b =5ma - - 0.75 i c =10ma, i b =1ma - - 0.85 i c =20ma, i b =2ma base-emitter saturation voltage v be(sat) - - 0.9 v i c =30ma, i b =3ma base-emitter on voltage v be(on) - - 2 v i c =100ma, v ce =10v small-signal characteristics transition frequency f t 40 - 200 mhz v ce =20v, i c =10ma, f=20mhz collector-base capacitance c cb - 6 - pf v cb =20v, f=1mhz emitter-base capacitance c eb - 80 - pf v eb =0.5v, f=1mhz notes: 1. pulse test : pulse width=300 s, duty cycle=2%.
elektronische bauelemente 2SC6517 0.5a , 350v npn plastic encapsulated transistor 30-oct-2015 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente 2SC6517 0.5a , 350v npn plastic encapsulated transistor 30-oct-2015 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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